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400V
27A
0.16
APT4016BVFR
APT4016SVFR
APT4016BVFRG* APT4016SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V (R)
V(R)
FREDFET
BVFR
TO -2 47
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
D3PAK
SVFR
* Faster Switching * Lower Leakage * Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated * TO-247 or Surface Mount D3Pak
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT4016B_SVFR(G) UNIT Volts Amps
400 27 108 30 40 280 2.24 -55 to 150 300 27 30
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
400 27 0.16 250 1000 2 4 100
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 14A)
Ohms A
2-2006 050-5634 Rev A
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT4016B_SVFR(G)
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 27A @ 25C VGS = 15V VDD = 200V ID = 27A @ 25C RG = 1.6 MIN TYP MAX UNIT pF
3350 510 200 135 24 60 11 10 48 6
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
27 108 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -27A)
5
Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -27A, di/dt = 100A/s) Reverse Recovery Charge (IS = -27A, di/dt = 100A/s) Peak Recovery Current (IS = -27A, di/dt = 100A/s)
t rr Q rr IRRM
250 450 1.8 6.0 14 24
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.45 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.32mH, R = 25, Peak I = 27A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ]
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
, THERMAL IMPEDANCE (C/W)
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.1 0.05
050-5634 Rev A
2-2006
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
Typical Performance Curves
50 VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
APT4016B_SVFR(G)
50 VGS=15V 5.5V 40 VGS=10V VGS=7V 30 5V 20 5.5V 6V
40
30 5V 20
10
4.5V
10
4.5V
4V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
4V 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 2.0
V
GS
0
0
50
ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
40
1.8 1.6 1.4
30
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
VGS=10V VGS=20V
20
1.2 1.0 0.8
10 TJ = +125C 0 TJ = +25C TJ = -55C
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 30
ID, DRAIN CURRENT (AMPERES)
0
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
24
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
18
1.05
12
1.00
6
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D D
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7
10-2005
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
050-5634 Rev A
APT4016B_SVFR(G)
150 100
ID, DRAIN CURRENT (AMPERES)
10,000 10S
OPERATION HERE LIMITED BY RDS (ON)
50
100S
C, CAPACITANCE (pF)
5,000
Ciss
10 5
1mS
10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
1,000 500
Coss Crss
.1
1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=80V VDS=200V 12 VDS=320V 8
200 100 50 TJ =+150C TJ =+25C
16
10 5
1 .5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 (BVFR) Package Outline
e1 SAC: Tin, Silver, Copper
D PAK (SVFR) Package Outline
e3 100% Sn
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05(.632)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
10-2005
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
050-5634 Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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